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tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com document number 83501 rev. a2, 08feb01 1 (12) optocoupler with phototransistor output description the tcet120./ tcet2200 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 8-lead plastic dual inline package. the elements are mounted on one leadframe using a coplanar technique , providing a fixed distance between input and output for highest safety requirements. applications circuits for safe protective separation against electrical shock according to safety class ii (reinforced isolation): for appl. class i iv at mains voltage 300 v for appl. class i iii at mains voltage 600 v according to vde 0884, table 2, suitable for: switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. vde standards these couplers perform safety functions according to the following equipment standards: vde 0884 optocoupler for electrical safety requirements iec 950/en 60950 office machines (applied for reinforced isolation for mains voltage 400 v rms ) vde 0804 telecommunication apparatus and data processing iec 65 safety for mains-operated electronic and related household apparatus 15123 emitter coll. anode cath. 4 pin 8 pin 15115 c
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com 2 (12) document number 83501 rev. a2, 08feb01 order instruction ordering code ctr ranking remarks TCET1200/ TCET1200g 1) 50 to 600% 4 pin = single channel tcet1201/ tcet1201g 1) 40 to 80% 4 pin = single channel tcet1202/ tcet1202g 1) 63 to 125% 4 pin = single channel tcet1203/ tcet1203g 1) 100 to 200% 4 pin = single channel tcet1204/ tcet1204g 1) 160 to 320% 4 pin = single channel tcet2200 50 to 600% 8 pin = dual channel 1) g = leadform 10.16 mm; g is not marked on the body features approvals (are applied): bsi : bs en 41003, bs en 60095 (bs 415), bs en 60950 (bs 7002), certificate number 7081 and 7402 fimko (seti): en 60950, certificate number 202117 u nderwriters l aboratory (ul) 1577 recognized, file number e-76222 double protection csa (c-ul) 1577 recognized file number e- 76222 - double protection vde 0884, certificate number 115667 vde 0884 related features: rated impulse voltage (transient overvoltage) v iotm = 8 kv peak isolation test voltage (partial discharge test voltage) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak) rated recurring peak voltage (repetitive) v iorm = 600 v rms creepage current resistance according to vde 0303/iec 112 c omparative t racking i ndex: cti 175 thickness through insulation 0.75 mm internal creepage distance > 4 mm general features: ctr offered in 5 groups isolation materials according to ul94-vo pollution degree 2 (din/vde 0110 / resp. iec 664) climatic classification 55/100/21 (iec 68 part 1) special construction: therefore, extra low coupling capacity of typical 0.2 pf, high c ommon m ode r ejection low temperature coefficient of ctr g = leadform 10.16 mm; provides creepage distance > 8 mm, for tcet2200 optional; suffix letter `g' is not marked on the optocoupler coupling system u
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com document number 83501 rev. a2, 08feb01 3 (12) absolute maximum ratings input (emitter) parameter test conditions symbol value unit reverse voltage v r 6 v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a power dissipation t amb 25 c p v 100 mw junction temperature t j 125 c output (detector) parameter test conditions symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7 v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation t amb 25 c p v 150 mw junction temperature t j 125 c coupler parameter test conditions symbol value unit isolation test voltage (rms) v io 5 kv total power dissipation t amb 25 c p tot 250 mw operating ambient temperature range t amb 40 to +100 c storage temperature range t stg 55 to +125 c soldering temperature 2 mm from case t 10 s t sd 260 c
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com 4 (12) document number 83501 rev. a2, 08feb01 electrical characteristics (t amb = 25 c) input (emitter) parameter test conditions symbol min. typ. max. unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf output (detector) parameter test conditions symbol min. typ. max. unit collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7 v collector emitter cut-off current v ce = 20 v, i f = 0, e = 0 i ceo 10 100 na coupler parameter test conditions symbol min. typ. max. unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio (ctr) parameter test conditions type symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 5 ma TCET1200(g)/ tcet2200 ctr 0.50 6.0 v ce = 5 v, i f = 10 ma tcet1201(g) ctr 0.40 0.8 ce f tcet1202(g) ctr 0.63 1.25 tcet1203(g) ctr 1.0 2.0 tcet1204(g) ctr 1.6 3.2
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com document number 83501 rev. a2, 08feb01 5 (12) maximum safety ratings (according to vde 0884) see figure 1 this device is used for protective separation against electrical shock only within the maximum safety ratings. this must be ensured by using protective circuits in the applications. input (emitter) parameters test conditions symbol value unit forward current i si 130 ma output (detector) parameters test conditions symbol value unit power dissipation t amb 25 c p si 265 mw coupler parameters test conditions symbol value unit rated impulse voltage v iotm 8 kv safety temperature t si 150 c insulation rated parameters (according to vde 0884) parameter test conditions symbol min. typ. max. unit partial discharge test voltage routine test 100%, t test = 1 s v pd 1.6 kv partial discharge test voltage t tr = 60 s, t test = 10 s, v iotm 8 kv gg lot test (sample test) tr test (see figure 2) v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 0 25 50 75 125 0 50 100 150 200 300 p total power dissipation ( mw ) tot t si safety temperature ( c ) 150 94 9182 100 250 phototransistor psi ( mw ) ir-diode isi ( ma ) figure 1. derating diagram t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2 figure 2. test pulse diagram for sample test according to din vde 0884
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com 6 (12) document number 83501 rev. a2, 08feb01 switching characteristics parameter test conditions symbol typ. unit delay time v s = 5 v, i c = 2 ma, r l = 100 (see figure 3) t d 3.0 s rise time s c l (g) t r 3.0 s turn-on time t on 6.0 s storage time t s 0.3 s fall time t f 4.7 s turn-off time t off 5.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k (see figure 4) t on 9.0 s turn-off time s f l (g) t off 10.0 s channel i channel ii 95 10804 oscilloscope r l = 1 m c l = 20 pf r g = 50 t p t p = 50 s t = 0.01 + 5 v i c = 2 ma; adjusted through input amplitude i f 0 i f 50 100 figure 3. test circuit, non-saturated operation + 5 v i f = 10 ma 95 10843 i c channel i channel ii oscilloscope r l > 1 m c l < 20 pf i f 0 r g = 50 t p t p = 50 s t = 0.01 50 1 k figure 4. test circuit, saturated operation t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d + t r ) turn-on time t s storage time t f fall time t off (= t s + t f ) turn-off time figure 5. switching times
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com document number 83501 rev. a2, 08feb01 7 (12) typical characteristics (t amb = 25 c, unless otherwise specified) 0 50 100 150 200 250 300 0 40 80 120 p total power dissipation ( mw ) t amb ambient temperature ( 5 c ) 96 11700 tot coupled device phototransistor ir-diode figure 6. total power dissipation vs. ambient temperature 0.1 1.0 10.0 100.0 1000.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f forward voltage ( v ) 96 11862 f i forward current ( ma ) figure 7. forward current vs. forward voltage 25 0 25 50 0 0.5 1.0 1.5 2.0 ctr relative current transfer ratio rel t amb ambient temperature ( 5 c ) 95 11025 75 v ce =5v i f =5ma figure 8. relative current transfer ratio vs. ambient temperature 0255075 1 10 100 1000 10000 i collector dark current, ceo t amb ambient temperature ( 5 c ) 100 95 11026 with open base ( na ) v ce =20v i f =0 figure 9. collector dark current vs. ambient temperature 0.1 1 10 0.01 0.1 1 100 i collector current ( ma ) c i f forward current ( ma ) 100 95 11027 10 v ce =5v figure 10. collector current vs. forward current 0.1 1 10 0.1 1 10 100 v ce collector emitter voltage ( v ) 100 95 10985 i collector current ( ma ) c i f =50ma 5ma 2ma 1ma 20ma 10ma figure 11. collector current vs. collector emitter voltage
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com 8 (12) document number 83501 rev. a2, 08feb01 110 0 0.2 0.4 0.6 0.8 1.0 v collector emitter saturation voltage ( v ) cesat i c collector current ( ma ) 100 ctr=50% 20% 10% 95 11028 figure 12. collector emitter saturation voltage vs. collector current 0.1 1 10 1 10 100 1000 ctr current transfer ratio ( % ) i f forward current ( ma ) 100 95 11029 v ce =5v figure 13. current transfer ratio vs. forward current et1100 820utk63 type date code coupling system indicator company logo production location 15081 pin1 indication (ym) figure 14. marking example 02 4 6 0 2 4 6 8 10 i c collector current ( ma ) 10 95 11030 t / t turn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 t off t on figure 15. turn on / off time vs. collector current 0 5 10 15 0 10 20 30 40 50 i f forward current ( ma ) 20 95 11031 t / t turn on / turn off time ( s ) off on saturated operation v s =5v r l =1k t off t on figure 16. turn on / off time vs. forward current
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com document number 83501 rev. a2, 08feb01 9 (12) dimensions of tcet120. in mm 14789
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com 10 (12) document number 83501 rev. a2, 08feb01 dimensions of tcet120.g in mm 14792
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com document number 83501 rev. a2, 08feb01 11 (12) dimensions of tcet2200 in mm 14784
tcet120.(g) up to tcet2200 vishay semiconductors www.vishay.com 12 (12) document number 83501 rev. a2, 08feb01 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423

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